 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| H5N6001P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1425A (Z) 2nd. Edition May 2001 Features * Low on-resistance * Low leakage current * High speed switching * Low gate charge (Qg) Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Frange) 3. Source H5N6001P Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal inpedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Symbol VDSS VGSS ID ID (pulse)* IDR IDR (pulse)* IAP* 3 2 1 1 Value 600 30 20 80 20 80 6.5 150 0.833 150 -55 to +150 Unit V V A A A A A W C/W C C Pch* ch-c Tch Tstg Rev.0, May 2001, page 2 of 2 H5N6001P Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Symbol Min V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr 600 -- -- 3.0 12 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 20 0.30 4640 340 70 60 100 220 90 135 20 65 0.9 590 6.5 Max -- 1 0.1 4.0 -- 0.38 -- -- -- -- -- -- -- -- -- -- 1.4 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 10 A, VDS = 10 V* 4 4 ID = 10 A, VGS = 10 V* VDS = 25 V VGS = 0 f = 1 MHz VDD 300 V, ID = 10 A VGS = 10 V RL = 30 Rg = 10 VDD = 480 V VGS = 10 V ID = 20 A IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 diF/dt = 100 A/s Rev.0, May 2001, page 3 of 3 H5N6001P Main Characteristics Power vs. Temperature Derating 200 Channel Dissipation Pch (W) 100 30 Drain Current I D (A) 150 10 3 1 0.3 100 Maximum Safe Operation Area 10 s 1m 10 0 PW s s = 10 DC ms (T Op (1 c= e sh ot) 25 ratio C n ) 50 0.1 this area is 0.03 0.01 Operation in limited by RDS(on) Ta = 25C 1 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) 0 50 100 150 200 Case Temperature Tc (C) Typical Output Characteristics 50 Pulse Test 8V 6V 30 Drain Current I D (A) Typical Transfer Characteristics 50 V DS = 10 V Pulse Test 40 40 Drain Current I D (A) 10 V 30 20 5.5 V 20 Tc = 75C 25C -25C 2 4 6 8 10 Gate to Source Voltage V GS (V) 10 5V VGS = 4.5 V 0 4 8 12 16 20 Drain to Source Voltage V DS (V) 10 0 Rev.0, May 2001, page 4 of 4 H5N6001P Drain to Source Saturation Voltage VS. Gate to Source Voltage Drai to Source on State Resistance RDS(on) () 10 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 8 I D = 20 A 6 Static Drain to Source on State Resistance vs. Drain Current 2 Pulse Test VGS = 10 V, 15 V 1 0.5 4 10 A 2 5A 0.2 0 0.1 4 8 12 16 20 1 2 Gate to Source Voltage VGS (V) 5 10 20 50 Drain Current I D (A) 100 Static Drain to Source on State Resistance RDS(on) () Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 1 Pulse Test 0.8 V GS = 10 V I D = 20 A 0.6 5A 0.4 10 A 0.2 0 -25 Forward Transfer Admittance vs. Drain Current 100 50 Tc = -25C 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 V DS = 10 V Pulse Test 5 10 20 50 100 75C 25C 0 25 50 75 100 125 150 (C) Case Temparature Tc Drain Current I D (A) Rev.0, May 2001, page 5 of 5 H5N6001P Body-Drain Diode Reverce Recovery Time 1000 10000 5000 Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) Capacitance C (pF) 500 200 100 50 2000 1000 500 200 100 50 Ciss Coss 20 10 0.1 di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 20 VGS = 0 10 Crss 100 150 200 250 f = 1 MHz 50 Drain to Source Voltage V DS (V) 0 Dynamic Input Characteristics 1000 20 I D = 20 A 800 V DD = 100 V 300 V 480 V VGS 16 10000 Switching Characteristics Drain to source Voltage V DS (V) Gate to Source Voltage V GS (V) V GS = 10 V, V DD = 300 V PW = 5 s, duty 1% R G = 10 Switching Time t (ns) 1000 t d(off) 100 tf t d(on) tr 10 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 tr 600 VDS 12 400 8 200 V DD = 480 V 300 V 100 V 40 80 120 160 Gate Charge Qg (nC) 4 0 200 0 Rev.0, May 2001, page 6 of 6 H5N6001P Reverce Drain Current vs. Source to Drain Voltage 50 6 Gate to Source Cutoff Voltage vs. Case Temparature Reverce Drain Current I DR (A) Gate to SourceCutoff Voltage VGS(off) (V) V DS = 10 V 40 V GS = 0 V 5V, 10 V 20 5 4 3 0.1mA 2 1 0 -50 1mA I D = 10mA 30 10 Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source Drain Voltage 0 50 100 150 200 Case Temparature Tc (C) Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 300 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr Rev.0, May 2001, page 7 of 7 H5N6001P Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C PDM D= PW T 0.03 0.02 1 0.0 1s PW T t ho pu lse 0.01 10 100 1m 10 m 100 m Pulse Width PW (s) 1 10 Rev.0, May 2001, page 8 of 8 H5N6001P Package Dimensions As of January, 2001 5.0 0.3 15.6 0.3 1.0 4.8 0.2 1.5 Unit: mm 3.2 0.2 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P -- Conforms 5.0 g 0.3 Rev.0, May 2001, page 9 of 9 H5N6001P Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.0, May 2001, page 10 of 10 |
Price & Availability of H5N6001P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |